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Improvement of On–Off-Current Ratio in  \hbox {TiO}_{\rm x} Active-Channel TFTs Using \hbox {N}_{2} \hbox {O} Plasma Treatment

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4 Author(s)
Park, Jae-Woo ; Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon ; Dongyun Lee ; Hakyoung Kwon ; Seunghyup Yoo

Without sacrificing the on-current in the transfer characteristics, we have successfully reduced the off-current part by the optimal N2O plasma treatment to improve the on-off-current ratio in n-type titanium oxide ( TiOx) active-channel thin-film transistors. While the high-power (275 W) N2O plasma treatment oxidizes the whole TiOx channel and results in the reduction of both on- and off-current, the optimized low-power (150 W) process makes the selective oxidation of the top portion in the channel and reduces only the off-current significantly. Increase in on-off ratio by almost five orders of magnitude is achieved without change in on-current by using the presented method.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 4 )