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The integrated passive device (IPD) technology was currently developed for high performance, small volume or size, low cost and multi-functional integration for wireless RF front-end applications. Especially wafer level packaging technologies offer an interesting variety of different possibilities for the implementation of integrated passive components. The IPD process is made by a low-cost manufacturing technology and a high-performance process technology of electro-chemically forming spin coating layer on glass wafer and processing thick-Cu interconnects and polyimide dielectrics. In this paper, an integrated Marchand-type balun for 2.45-GHz WLAN applications is presented and exhibit excellent measured performance with insertion loss of 1 dB. The measured amplitude balance and phase balance of 0.45 dB and 3 degree, and common mode rejection ratio of 28 dB were realized. Finally, EM simulation and experimental verification show very good agreement between simulated and measured results by validating IPD design process.