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Reliability and Failure Mechanism of Current-Stressed 99.3Sn-0.7Cu/96.5Sn-3Ag-0.5Cu Composite Flip-Chip Solder Joints with Cu or Au/Ni/Cu Substrate Pad Metallization

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3 Author(s)
Ying-Ta Chiu ; Central Labs., Adv. Semicond. Eng., Inc., Kaohsiung ; Yu-Hsiu Shao ; Yi-Shao Lai

Electromigration and thermomigration in the flip chip package are apparent in the reliability test. The 99.3Sn-0.7Cu/96.5Sn-3Ag-0.5Cu composite flip-chip solder joints with Ti/Ni(V)/Cu under bump metallurgy and different surface finishes are investigated when applied current density of 10 kA/cm2 and 15 kA/cm2 at 150degC and 125degC, respectively. Experimental results show the solder migrates to the Al trace in the chip when the solder joint was subjected to a test condition of 15 kA/cm2 at 125degC. This is because the combined effect from electromigration and thermomigration causes trace peeling in the flip chip package at a high current density over 15 kA/cm2. It is also revealed that the mean time to failure of the solder joint with Au/Ni/Cu pad surface finish under 10 kA/cm2 at 150degC is 1141 h longer than the one with Cu pad finish. The dendrite of Cu-Sn compound under 15 kA/cm2 at 125degC is different from that under 10 kA/cm2 at 150degC.

Published in:

Microsystems, Packaging, Assembly & Circuits Technology Conference, 2008. IMPACT 2008. 3rd International

Date of Conference:

22-24 Oct. 2008