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We propose the combination of magnetoresistance (MR) and Pseudo-MOSFET (Psi-MOSFET) measurements as an improved method for the characterization of silicon-on-insulator (SOI) materials. Measurements were performed on ultrathin SOI Psi-MOSFETs with Corbino geometry by applying high magnetic field and substrate biasing. Several models and extraction methods are developed and compared for an accurate evaluation of electron mobility. In particular, the series resistance effect is removed by using appropriate corrections. The MR mobility can be determined at low or variable electric field. The MR mobility behavior is investigated as a function of effective electric field, temperature, and film thickness. The correlation between the MR mobility and effective mobility, determined in Psi-MOSFETs at zero magnetic field, enables a detailed analysis of the electron transport and scattering mechanisms in the silicon thin film.