Referenced Items are not available for this document.
A silicon transient voltage suppresser (TVS) is presented for off-chip EOS/ESD protection of ICs with supply voltages ranging from 3.3 V down to 1.5 V. The np/sup +/p/sup -/n four-layer TVS operates in punchthrough mode instead of the avalanche mode as in conventional TVS diodes. Performance was investigated by device simulator TMA-MEDICI for several device structure options for ultra-low-voltage EOS/ESD protection.
Published in:
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995
Date of Conference: 12-14 Sept. 1995
- Page(s):
- 27 - 33
- Meeting Date :
- 12 Sep 1995-14 Sep 1995
- Print ISBN:
- 1-878303-59-7
- INSPEC Accession Number:
- 5255415
- Conference Location :
- Phoenix, AZ, USA
- Digital Object Identifier :
- 10.1109/EOSESD.1995.478265
- Product Type:
- Conference Publications
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