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Punchthrough transient voltage suppressor for EOS/ESD protection of low-voltage IC's

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4 Author(s)
Bin Yu ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Ya-Chin King ; Pohlman, J. ; Chenming Hu

A silicon transient voltage suppresser (TVS) is presented for off-chip EOS/ESD protection of ICs with supply voltages ranging from 3.3 V down to 1.5 V. The np/sup +/p/sup -/n four-layer TVS operates in punchthrough mode instead of the avalanche mode as in conventional TVS diodes. Performance was investigated by device simulator TMA-MEDICI for several device structure options for ultra-low-voltage EOS/ESD protection.

Published in:

Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995

Date of Conference:

12-14 Sept. 1995