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A Comparative Study of Carrier Transport for Overlapped and Nonoverlapped Multiple-Gate SOI MOSFETs

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2 Author(s)
Wei Lee ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Pin Su

This paper provides a comparative study of carrier transport characteristics for multiple-gate silicon-on-insulator MOSFETs with and without the nonoverlapped source/drain structure. For the overlapped devices, we observed Boltzmann law in subthreshold characteristics and phonon-limited behavior in the inversion regime. For the nonoverlapped devices, however, we found insensitive temperature dependence for drain current in both subthreshold and inversion regimes. Our low-temperature measurements indicate that the intersubband scattering is the dominant carrier transport mechanism for narrow overlapped multigate field-effect transistors(MuGFETs). For the nonoverlapped MuGFETs, the voltage-controlled potential barriers in the nonoverlapped regions may give rise to the weak localization effect (conductance reduction) and the quantum interference fluctuations.

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Nanotechnology, IEEE Transactions on  (Volume:8 ,  Issue: 4 )