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Omega-Gate p-MOSFET With Nanowirelike SiGe/Si Core/Shell Channel

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8 Author(s)
Jiang, Y. ; Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore ; Singh, N. ; Liow, T.Y. ; Lim, P.C.
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We demonstrated, for the first time, p-MOSFETs (LG ges 40 nm) with SiGe/Si core/shell channel integrated on bulk Si using a CMOS-compatible top-down processes. The Omega-shaped nanowire (NW)-like channels comprised of ~12-nm-thick inner SiGe core and 4-nm-thick outer Si shell. The devices exhibited good subthreshold characteristics (with SS ~128 mV/dec), suggesting successful surface passivation of the SiGe NW body by the outer Si capping layer. Drive currents of ~167 muA/mum is achieved, which is 15% enhancement over the reference Si-channel devices fabricated by the same process. Double gm peaks are observed at low drain bias for the core/shell SiGe NW devices, confirming the quantum confinement of holes in the SiGe inner core.

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Electron Device Letters, IEEE  (Volume:30 ,  Issue: 4 )