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Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition

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4 Author(s)
Po-Yi Kuo ; Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu ; Tien-Sheng Chao ; Jyun-Siang Huang ; Tan-Fu Lei

We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370degC. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 3 )