Referenced Items are not available for this document.
We have successfully developed and fabricated a poly-Si thin-film transistor (poly-Si TFT) nonvolatile memory using Ge nanocrystals (Ge-NCs) as a charge trapping layer. Process compatibility and memory operation of the device were investigated. The Ge-NC trapping layer was directly deposited by low-pressure chemical vapor deposition at 370degC. Results show that the new poly-Si TFT nonvolatile Ge-NC memory has good programming/erasing efficiency, long charge retention time, and good endurance characteristics. These results show that poly-Si TFT nonvolatile Ge-NC memory is the promising nonvolatile memory candidate for system-on-panel application in the future.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
3
)
Date of Publication: March 2009
- Page(s):
- 234 - 236
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10479236
- Digital Object Identifier :
- 10.1109/LED.2008.2011145
- Product Type:
- Journals & Magazines
- Date of Publication :
- 10 February 2009
- Date of Current Version :
- 24 February 2009
- Issue Date :
- March 2009
- Sponsored by :
- IEEE Electron Devices Society
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