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\hbox {TiN/ZrO}_{2} /Ti/Al Metal–Insulator–Metal Capacitors With Subnanometer CET Using ALD-Deposited \hbox {ZrO}_{2} for DRAM Applications

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9 Author(s)
Monaghan, S. ; Tyndall Nat. Inst., Univ. Coll. Cork, Cork ; Cherkaoui, K. ; O'Connor, E. ; Djara, V.
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We provide the first report of the structural and electrical properties of TiN/ZrO2/Ti/Al metal-insulator-metal capacitor structures, where the ZrO2 thin film (7-8 nm) is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics are reported for premetallization rapid thermal annealing (RTP) in N2 for 60 s at 400degC, 500degC, or 600degC. For the RTP at 400degC, we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of 1 V and low capacitance equivalent thickness values of ~ 0.9 nm at a gate voltage of 0 V. The dielectric constant of ZrO2 is 31 plusmn 2 after RTP treatment at 400degC.

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Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )