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Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion

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5 Author(s)
Xiaobin Wang ; Seagate Technol. LLC, Bloomington, MN ; Yiran Chen ; Haiwen Xi ; Hai Li
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Existence of spintronic memristor in nanoscale is demonstrated based upon spin-torque-induced magnetization switching and magnetic-domain-wall motion. Our examples show that memristive effects are quite universal for spin-torque spintronic device at the time scale that explicitly involves the interactions between magnetization dynamics and electronic charge transport. We also proved that the spintronic device can be designed to explore and memorize the continuum state of current and voltage based on interactions of electron and spin transport.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )