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High Mobility and High N concentration of GaNxAs1-x Thin Films Grown by Metal Organic Chemical Vapor Deposition

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4 Author(s)
I. Hamidah ; Physics Laboratory, Dept. of Mechanical Engineering, Indonesia University of Education, Jl. Dr. Setiabudhi No. 229 Bandung 40154 Indonesia. Phone/Fax: 62-22-2020162 ; A. Suhandi ; A. Setiawan ; P. Arifin

GaNxAs1-x thin films had been successfully grown on semi-insulating GaAs (001) substrates by metal organic chemical vapour deposition (MOCVD) method. The precursors used were trimethylgallium (TMGa), dimethylhydrazine (DMHy), and tris-dimethylaminoarsenic (TDMAAs). GaNxAs1-x thin films of 1.2-2.4 mum thick were grown at the total reactor pressure of 50 torr, H2 and N2 flow rate of 300 sccm, temperatures range of 560 - 590degC, and the ratio of TDMAAs/TMGa and DMHy/TDMAAs flow rate of 4.5 and 0.8, respectively. The growth rate of GaNxAs1-x thin films are in the range of 0.8 - 1.6 mum/h. The N concentration of GaNxAs1-x thin films was studied by HR-XRD measurements and was calculated using Vegard's law from symmetric and asymmetric reflection. From this study, it found that the N concentration of GaNxAs1-x thin films were in the range of 4.9 and 5.5%. The measured electron mobility using Hall-van der Pauw method is in order of 3270 and 3380 cm2 V-1 s-1 at x = 4.9% and 5.5%, respectively.

Published in:

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Date of Conference:

8-11 Dec. 2008