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Ion-implanted p-n junction capacitors for GaAs DRAMs

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4 Author(s)
Pabst, J.W. ; Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA ; Dungan, T.E. ; Cooper, J.A., Jr. ; Melloch, M.R.

The generation-limited storage time of ion-implanted GaAs p-n junction capacitors is reported. Deep n-type potential wells were formed in a lightly p-doped epitaxial layer with 150-keV Si++ doses of 5×1013 cm-2 and 1×1014 cm-2. Mg+ doses of 5×1014 cm-2 were implanted through a thin SiON cap at 40 and 60 keV to form shallow p+-regions within the n-wells. Storage times obtained from capacitance transient measurements of the p-n-p structures indicate the possibility of planar ion-implanted GaAs dynamic memory cells at room temperature

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Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 3 )