By Topic

Ion-implanted p-n junction capacitors for GaAs DRAMs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Pabst, J.W. ; Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA ; Dungan, T.E. ; Cooper, J.A., Jr. ; Melloch, M.R.

The generation-limited storage time of ion-implanted GaAs p-n junction capacitors is reported. Deep n-type potential wells were formed in a lightly p-doped epitaxial layer with 150-keV Si++ doses of 5×1013 cm-2 and 1×1014 cm-2. Mg+ doses of 5×1014 cm-2 were implanted through a thin SiON cap at 40 and 60 keV to form shallow p+-regions within the n-wells. Storage times obtained from capacitance transient measurements of the p-n-p structures indicate the possibility of planar ion-implanted GaAs dynamic memory cells at room temperature

Published in:

Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 3 )