Effects of interface and bulk recombination on switching characteristics of AlGaAs/GaAs pnpn bistable device

Device modeling is used to analyze the steady-state current voltage characteristics of double heterostructure AlGaAs/GaAs pnpn switches in the presence of interface and bulk recombination mechanisms. Simulation results show that the holding current increases significantly by shortening the carrier lifetime at heterojunction interface, while the holding voltage and breakover point remain relatively constant. Results also indicate that shortening the carrier lifetime in the inner pn homojunction region only increases the off-state leakage current. These results are in agreement with experimental data obtained by others, and may be used to design a device with optimum switching performance.