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A self-aligned trenched cathode lateral insulated gate bipolar transistor with high latch-up resistance

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3 Author(s)
Mok, P.K.T. ; Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada ; Nezar, A. ; Salama, C.A.T.

This paper discusses a modified insulated gate bipolar transistor (LIGBT) structure using a self-aligned trenched contact at the cathode of the device which significantly reduces the parasitic p-base resistance underneath the n+ cathode region to suppress the latch-up. The trenched cathode LIGBT (TC-LIGBT) structure is BiCMOS compatible and the LIGBTs with latching current densities over 1200 A/cm 2 have been obtained using a 4 μm technology

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 12 )