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Characteristics of top-gate thin-film transistors fabricated on nitrogen-implanted polysilicon films

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3 Author(s)
Yang, Chien Kuo ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Tan Fu Lei ; Chung Len Lee

The electrical characteristics of top-gate thin-film transistors (TFT's) fabricated on the nitrogen-implanted polysilicon of the doses ranging from 2×1012-2×1014 ions/cm2 were investigated in this work. The experimental results showed that nitrogen implanted into polysilicon followed by an 850°C 1 h annealing step had some passivation effect and this effect was much enhanced by a following H2-plasma treatment. The threshold voltages, subthreshold swings, ON-OFF current ratios, and field effect mobilities of both n-channel and p-channel TFT's were all improved. Moreover, the hot-carrier reliability was also improved. A donor effect of the nitrogen in polysilicon was also found which affected the overall passivation effect on the p-channel TFT's

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 12 )