Referenced Items are not available for this document.
This work demonstrates a well-controlled technique of channel defect engineering, by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to spoil the parasitic bipolar gain, and thus improve the source-to-drain breakdown voltage and reduce the front-channel gate-induced-drain-leakage (GIDL). The Ge-implant also serves the dual purpose of positioning most of the subgap states in the back interface region which reduce back-channel off-state leakage
Published in:
Electron Devices, IEEE Transactions on
(Volume:42
,
Issue:
12
)
Date of Publication: Dec 1995
- Page(s):
- 2096 - 2103
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5158122
- Digital Object Identifier :
- 10.1109/16.477766
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1995
- Sponsored by :
- IEEE Electron Devices Society
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