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Suppression of parasitic bipolar effects and off-state leakage in fully-depleted SOI n-MOSFET's using Ge-implantation

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4 Author(s)
Hua-Fang Wei ; Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA ; Chung, J.E. ; Kalkhoran, Nader M. ; Namavar, Fereydoon

This work demonstrates a well-controlled technique of channel defect engineering, by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to spoil the parasitic bipolar gain, and thus improve the source-to-drain breakdown voltage and reduce the front-channel gate-induced-drain-leakage (GIDL). The Ge-implant also serves the dual purpose of positioning most of the subgap states in the back interface region which reduce back-channel off-state leakage

Published in:

Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 12 )

Date of Publication:

Dec 1995

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