Suppression of parasitic bipolar effects and off-state leakage in fully-depleted SOI n-MOSFET's using Ge-implantation

This work demonstrates a well-controlled technique of channel defect engineering, by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to spoil the parasitic bipolar gain, and thus improve the source-to-drain breakdown voltage and reduce the front-channel gate-induced-drain-leakage (GIDL). The Ge-implant also serves the dual purpose of positioning most of the subgap states in the back interface region which reduce back-channel off-state leakage.