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A new DC model of HBT's including self-heating effect suitable for circuit simulators

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5 Author(s)
J. Dupuis ; Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada ; R. Hajji ; F. M. Ghannouchi ; K. Saab
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This paper presents a new empirical DC model which includes self-heating effects. The expression of the collector current does not explicitly incorporate the junction temperature of the device to aid convergence process and to simplify the equations involved. A comparison of simulated and experimental DC-IV characteristics over the ohmic and active regions demonstrates the accuracy of the model. This model is suitable for optimization purposes and has been implemented in nonlinear circuit simulators, HSPICE and HP-MDS

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IEEE Transactions on Electron Devices  (Volume:42 ,  Issue: 12 )