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High-voltage polycrystalline CdSe thin-film transistors

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6 Author(s)
J. De Baets ; Lab. of Electron., Ghent State Univ., Belgium ; J. Vanfleteren ; I. De Rycke ; J. Doutreloigne
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The properties of self-aligned high-voltage CdSe thin-film transistors (TFTs) are described. By analyzing the different failure mechanisms, it is found that In-doped CdSe makes device operation up to 200 V feasible. Furthermore, the high-voltage CdSe TFT shows excellent low off currents and high transconductance

Published in:

IEEE Transactions on Electron Devices  (Volume:37 ,  Issue: 3 )