System Maintenance:
There may be intermittent impact on performance while updates are in progress. We apologize for the inconvenience.
By Topic

A Cantilever-Type Uncooled Infrared Detector With High Fill-Factor and Low-Noise Characteristic

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Dong Soo Kim ; Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon ; Il Woong Kwon ; Chi Ho Hwang ; Hyuck Jun Son
more authors

A capacitive microcantilever-type infrared (IR) detector having a unique structure that has high immunity to thermomechanical noise (TM-noise) is proposed. The device has a capacitive readout scheme and is compared with a conventional design using the same readout method by finite element model simulation. The total cantilever length was halved, compared with the conventional device structure, in order to increase the device's spring constant, and the IR absorber area was consequently increased as the portion of the leg in the given pixel area is decreased. Large spring constant and increased absorber area are the main causes of the TM-noise reduction. The feasibility of the device was shown by fabrication, and measured parameters demonstrated the structure's superiority. It was shown that the proposed structure potentially has low TM-noise and an overall noise-equivalent temperature difference (NETD) value that is lower than that of the conventional designed device. The NETD of the proposed device was found to be 5.7 mK.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 6 )