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Tungsten plug technology using substitution of W for Si

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3 Author(s)
Kobayashi, Nobuyoshi ; Hitachi Ltd., Tokyo, Japan ; Suzuki, Masayuki ; Saitou, M.

Novel W plug technology that is compatible with a conventional poly Si filling has been developed. In this technology, low-pressure chemical vapor deposition (LPCVD) poly Si is embedded in contacts and vias using etchback, and tungsten (W) is substituted for poly Si using Si reduction of WF6. This plug technology has been successfully applied to a 0.6-μm contact and a via filling. The specific contact resistivity was 2×10-7 and 4×10 -7 Ω-cm2 for n+ and p+ contacts, respectively. For vias on W and WSi2 polycide interconnections, the contact resistivity is found to be less than 1×10-8 Ω-cm2. The amount of W substituted for Si by this reaction is determined by several process parameters: thin oxides on Si surfaces, deposition temperature, and partial pressure of WF6. W films that are more than 1.5-μm thick can be substituted for Si in this technology

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Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 3 )