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Novel diode test structures have been manufactured to characterize long-range dopant diffusion in tungsten silicide layers. A tungsten silicide to p-type silicon contact has been characterized as a Schottky barrier rectifying contact with a silicide work function of 4.8 eV. Long-range diffusion of boron for an anneal at 900degC for 30 min has been shown to alter this contact to become ohmic. Long-range diffusion of phosphorus with a similar anneal alters the contact to become a bipolar n-p diode. Bipolar diode action is demonstrated experimentally for anneal schedules of 30 min at 900deg C, indicating long-range diffusion of phosphorus ( ~ 38 mum). SIMS analysis shows dopant redistribution is adversely affected by segregation to the silicide/oxide interface. The concept of conduit diffusion has been demonstrated experimentally for application in advanced bipolar transistor technology.
Published in:
Semiconductor Manufacturing, IEEE Transactions on
(Volume:22
,
Issue:
1
)
Date of Publication: Feb. 2009
- Page(s):
- 80 - 87
- ISSN :
- 0894-6507
- INSPEC Accession Number:
- 10470428
- Digital Object Identifier :
- 10.1109/TSM.2008.2010734
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 03 February 2009
- Issue Date :
- Feb. 2009
- Sponsored by :
- IEEE Components, Packaging and Manufacturing Technology Society
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