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Characterization for High-Performance CMOS Using In-Wafer Advanced Kelvin-Contact Device Structure

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5 Author(s)
Kuroda, R. ; Grad. Sch. of Eng., To- hoku Univ., Sendai, Japan ; Teramoto, Akinobu ; Komuro, T. ; Sugawa, S.
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In this work, a new electrical characterization method for MOSFETs using an in-wafer Kelvin-contact device structure is developed. The developed method can eliminate the parasitic series resistance such as resistance in source/drain terminals of MOSFETs, in metal wires on wafers and in a measurement system. Using the developed method, we can measure and analyze the short channel transistors' intrinsic current-voltage characteristics as well as the quantitative effects of the parasitic series resistance to the device performance, very stably and accurately. In addition, a framework for the characterization of inversion layer mobility in ultrathin gate insulator MOSFETs with large gate current is provided. Based on the framework, the developed method is introduced as a suitable mobility characterization method.

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:22 ,  Issue: 1 )

Date of Publication:

Feb. 2009

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