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Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber

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4 Author(s)
Ko-Tao Lee ; Inst. of Electron. Eng., Nat. Tsing HuaUniversity, Hsinchu ; Yeeu-Chang Lee ; Jenq-Yang Chang ; Jeng Gong

The optical properties of gallium nitride light-emitting diode with mesh-textured sapphire back delineated by laser scriber and subsequently coated with silver-copper layers were investigated. This new structure improves the optical characteristics. The electroluminescence and luminous intensities are 30% and 20% stronger than that without mesh-textured trench and silver-copper at 20 mA, respectively. The maximum luminous intensity has 1.6 times enhancement, which is mainly from higher light extraction by the mesh-textured trench.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 7 )

Date of Publication:

April1, 2009

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