By Topic

Frequency-domain measurement of carrier escape times in MQW electro-absorption optical modulators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ido, T. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Sano, H. ; Tanaka, S. ; Inoue, H.

Frequency-domain measurement of carrier escape times in reverse-biased multiple-quantum wells (MQW's) is proposed and demonstrated. Measurement and analysis of opto-to-electrical (OE) frequency response give the escape times of both electrons and holes with excellent time resolution. Using this technique, we measured escape times in an InGaAs-InAlAs MQW electro-absorption modulator and estimated the carrier density in the wells during optical input. This measurement can clarify the optical saturation effect in optical devices such as MQW electro-absorption modulators.

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 12 )