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Polarization-independent electroabsorption modulators using strain-compensated InGaAs-InAlAs MQW structures

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5 Author(s)
Wakita, K. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Kotaka, I. ; Yoshino, K. ; Kondo, S.
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The improved modulation properties of strain compensated InGaAs-InAlAs multiple quantum well (MQW) electroabsorption modulators and their modules have been demonstrated. Introduction of a 0.5% tensile strain in wells and a 0.5% compression in barriers provides highly efficient operation such as a low driving voltage (V/sub 20/ dB=1.6 V) and a large modulation bandwidth (f/sub 3/ dB>20 GHz). This is in addition to low polarization-dependence with an extinction ratio difference between TE and TM and polarization of less than 1 dB.

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 12 )

Date of Publication:

Dec. 1995

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