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Ultra Low Noise Dielectric Resonators Oscillators with Tuning at Ku Band

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4 Author(s)
Liang Zhou ; Sch. of Electron. Inf. & Electr. Eng., Shanghai Jiao Tong Univ., Shanghai ; Zhuo Wu ; Rui Chu ; Jun-Fa Mao

This paper describes the design of very low noise, tunable, Ku band Dielectric Resonator Oscillators (DROs) presenting phase noise performance of -100 dBc/Hz at 1 kHz offset and -130 dBc/Hz at 10 kHz offset. SiGe based transistors are used for the oscillator sustaining amplifiers which offer circulating power 10 dBm and gain of 4 dB per stage as well as low flicker noise corner between 10 kHz and 40 kHz. The resonator has unloaded Q around 15,000 at operating frequency and is then optimized and coupled to the amplifiers for minimum phase noise where QL/Q0=1/2 hence S21=-6 dB. In order to incorporate tuning, phase shifter is also investigated. The phase noise measurement system is presented using two DROs beating at the same frequency.

Published in:

Microwave Conference, 2008 China-Japan Joint

Date of Conference:

10-12 Sept. 2008

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