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Study of Damage Mechanism of High Power Microwave on Electronic Equipments

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5 Author(s)
Xiao Jinshi ; College of Electronic Engineering, Naval University of Engineering, Wuhan 430033, China, Email: xiaojin1063@163.com ; Liu Wenhua ; Zhang Shiying ; Zhang Jinhua
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Currently, damage effect of high power microwave (HPM) on electronic equipments is of increasing interest. HPM can disturb, damage, or destroy many military or civil electronic equipments. In this paper, the representative HPM waveform is investigated in time and frequency field respectively, and the main characteristics (peak power, rise time, power density, etc) are analyzed and listed. HPM generation devices and radiation are also discussed. Coupling energy into electronic devices via front door and back door, as a function of coupling coefficient and the effective area, is modeled. By presenting lots of kinds of coupling modes and paths, damage effects are divided into five different classes, and damage mechanism of HPM on electronic equipments is proven in the paper.

Published in:

2008 China-Japan Joint Microwave Conference

Date of Conference:

10-12 Sept. 2008