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Multiple-Throw Millimeter-Wave FET Switches for Frequencies from 60 up to 120 GHz

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6 Author(s)
Kallfass, I. ; Fraunhofer Inst. for Appl. Solid-State Phys. (IAF), Freiburg ; Diebold, S. ; Massler, H. ; Koch, S.
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This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication frontends and imaging radiometers at 60, 94 and 120 GHz. In SPDT switches, state-of-the-art insertion loss of 1.4 and 1.8 dB is achieved at 60 and 94 GHz, respectively. Rivalled only by PIN diode switches, an insertion loss of <2 dB is demonstrated up to 120 GHz. Shorted stubs are used to compensate for parasitic FET capacitance and allow for matching. Linearity data is presented for 60 and 94 GHz SPDT switches. A comprehensive comparison with state-of-the-art planar SPDT switches is included. A 2:6 switch network for multi-antenna transceivers achieves <4 dB insertion loss at 60 GHz.

Published in:

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Date of Conference:

27-28 Oct. 2008