By Topic

Multiple-Throw Millimeter-Wave FET Switches for Frequencies from 60 up to 120 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
I. Kallfass ; Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany, ; S. Diebold ; H. Massler ; S. Koch
more authors

This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication frontends and imaging radiometers at 60, 94 and 120 GHz. In SPDT switches, state-of-the-art insertion loss of 1.4 and 1.8 dB is achieved at 60 and 94 GHz, respectively. Rivalled only by PIN diode switches, an insertion loss of <2 dB is demonstrated up to 120 GHz. Shorted stubs are used to compensate for parasitic FET capacitance and allow for matching. Linearity data is presented for 60 and 94 GHz SPDT switches. A comprehensive comparison with state-of-the-art planar SPDT switches is included. A 2:6 switch network for multi-antenna transceivers achieves <4 dB insertion loss at 60 GHz.

Published in:

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Date of Conference:

27-28 Oct. 2008