Skip to Main Content
As operating frequencies increase in state-of-the-art wireless designs, highly accurate modelling of critical interconnect paths routed over silicon is crucial for first-pass design success . With this in mind, the interconnect stack of an IBM silicon germanium (SiGe) process incorporating a TSV ground supply network was modelled with model accuracy and efficiency as the goals. A unique modelling methodology for assigning the values of silicon skin-effect circuit model elements is discussed. The final model is verified with hardware measurements and found to accurately estimate the frequency-dependent resistance, capacitance, and inductance of a single line over silicon at microwave frequencies in a compact, efficient, pre-layout circuit model that includes the effects of process variation.