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Microwave Compact Passive Circuit Model of Isolated Interconnect over a Silicon Substrate with a Through-Silicon Via (TSV) Ground Supply Network

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3 Author(s)
Woods, W. ; IBM Microelectron., Essex Junction, VT ; Wang, G. ; Hanyi Ding

As operating frequencies increase in state-of-the-art wireless designs, highly accurate modelling of critical interconnect paths routed over silicon is crucial for first-pass design success [1]. With this in mind, the interconnect stack of an IBM silicon germanium (SiGe) process incorporating a TSV ground supply network was modelled with model accuracy and efficiency as the goals. A unique modelling methodology for assigning the values of silicon skin-effect circuit model elements is discussed. The final model is verified with hardware measurements and found to accurately estimate the frequency-dependent resistance, capacitance, and inductance of a single line over silicon at microwave frequencies in a compact, efficient, pre-layout circuit model that includes the effects of process variation.

Published in:

Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European

Date of Conference:

27-28 Oct. 2008