Skip to Main Content
This paper demonstrates a broadband LNA for 60-GHz WPAN and a 92-GHz low-power distributed amplifier (DA) in an advanced CMOS technology. A post-processed technology (above-IC), used for packaging and bonding pads redistribution, provides ultra-low-loss on-chip passives in a cost-effective solution. In the WPAN bandwidth (57-64 GHz), the LNA has a 13.4 dB peak gain, a NF between 5.6-6.7 dB and a gain flatness of 1.7 dB. A 3-dB bandwidth of 11 GHz is achieved. The DA shows a 6.5 dB gain and a 3-dB BW of 92 GHz, giving a 195 GHz gain-bandwidth product (GBW), for a dc power consumption of 43 mW. Thank to the asset of Above-IC, this DA performs a ratio of the GBW and power consumption of 4.31 GHz/mW, which is by far the best reported tradeoff among similar architecture in CMOS, at least 2.8 times higher than others.