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High Performance on-chip inductor is a key enabling element of monolithic RF circuits and radio frequency (RF) system-on-chip. Generally, on chip inductor are planar devices but 3D symmetrical spiral interleaved inductor (3DSII) has been proposed  to lower the amount of area consumed by inductor. This paper presents a novel 3D group-cross symmetrical spiral interleaved inductor (3DGCSII), which has higher self-resonance frequency (SRF) and occupies the same layout area as 3DSII. Measurement data of 3DGCSI and 3DSII, achieved using STMicroelectronics Low Power 45 nm RF CMOS technology, are here compared with each other to show the advantages of this new inductor structure.