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Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In _{0.08} Ga _{0.92} N Shallow Step

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7 Author(s)
Cheng-Huang Kuo ; Dept. of Opt. & Photonics, Nat. Central Univ., Jhongli ; Fu, Y.K. ; Yeh, C.L. ; Tun, C.J.
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A nitride-based asymmetric two-step light-emitting diode (LED) with In0.08 Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08 Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In0.08 Ga0.92N shallow step.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 6 )