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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:30 Issue:4 Help

First Insight Into the Lifetime Acceleration Model of High- k \hbox {ZrO}_{2}/\hbox {SiO}_{2}/\hbox {ZrO}_{2} Stacks for Advanced DRAM Technology Nodes

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8 Author(s)
Agaiby, R. ; Qimonda Dresden GmbH, Dresden ; Hofmann, P. ; Zhou, Dayu ; Kerber, M.
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Long-term reliability results over six orders of magnitude in time are presented showing that the voltage acceleration model for ZrO2/SiO2/ZrO2 exhibits an exponential dependence with voltage, down to 2 V. The voltage acceleration parameter gamma is between 10 and 15 V-1, depending on the biasing polarity. Soft-breakdown behavior (SILC) is evident prior to the onset of hard breakdown as a result of barrier lowering or charge accumulation in the high- k film. Under ac stress conditions, this SILC branch is lowered in magnitude, translating to a gain in lifetime to breakdown.

Published in:
Electron Device Letters, IEEE  (Volume:30 ,  Issue: 4 )

Date of Publication: April 2009

Page(s):
340 - 342
ISSN :
0741-3106
INSPEC Accession Number:
10556040
Digital Object Identifier :
10.1109/LED.2009.2012520
Product Type:
Journals & Magazines
Date of Publication :
02 February 2009
Date of Current Version :
24 March 2009
Issue Date :
April 2009
Sponsored by :
IEEE Electron Devices Society

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