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Vibrational modes in GaxMn1−xSb studied by Raman spectroscopy

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4 Author(s)
Hasan, M.M. ; Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna ; Islam, M.R. ; Chen, N.F. ; Yamada, M.

Raman scattering study on vibrational modes has been reported in ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ions implantation, deposition, and post-annealing. The Raman experiments are performed in the implanted and unimplanted regions of the sample before and after etching. Only GaSb-like phonon modes are observed in the spectra measured from the unimplanted region. However, in addition to GaSb-like phonons, some extra modes are observed in the spectra measured from the implanted region of the sample. The experimental results demonstrate that the 115, 152, and 437 cm-1 modes are appeared due to surface defects and crystal disorder caused by Mn ions implantation and deposition processes. The origin of the weak structure observed approximately at 269 cm{-1} is not so clear. However, the frequency position of MnSb-like LO phonon mode (266.4 cm-1) determined by reduced-mass model is found to be close to the experimentally observed mode at 269 cm-1. The phonon mode appeared approximately at 659 cm-1 is found to be associated with blackish layer formed on the surface of the sample from the annealing process and is assigned to Mn3O4-like. Furthermore, existence of coupled LO-phonon plasmon mode is found in the spectra measured from the implanted and close to the implanted regions of the sample.

Published in:

Electrical and Computer Engineering, 2008. ICECE 2008. International Conference on

Date of Conference:

20-22 Dec. 2008