By Topic

A 750 Mb/s, 12 pJ/b, 6-to-10 GHz CMOS IR-UWB Transmitter With Embedded On-Chip Antenna

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kulkarni, V.V. ; Dept. of Electr. & Electron. Eng., Keio Univ., Yokohama ; Muqsith, M. ; Niitsu, K. ; Ishikuro, H.
more authors

This paper presents a novel impulse radio based ultra-wideband transmitter. The transmitter is designed in 0.18 mum CMOS process realizing extremely low complexity and low power. It exploits the 6-to-10 GHz band to generate short duration bi-phase modulated UWB pulses with a center frequency of 8 GHz. No additional RF filtering circuits are required since the pulse generator circuit itself has the functionality of pulse shaping. Generated pulses comply with the FCC spectral emission mask. Measured results show that the transmitter consumes 12 pJ/b to achieve a maximum pulse repetition rate of 750 Mb/s. An optional embedded on-chip antenna and a power amplifier operating in 6-10 GHz band are also designed and investigated as a future low cost solution for very short distance IR-UWB communications.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:44 ,  Issue: 2 )