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Low-Voltage Organic Field-Effect Transistor With PMMA/  \hbox {ZrO}_{2} Bilayer Dielectric

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6 Author(s)
Liwei Shang ; Key Lab. of Nanofabrication & Novel Devices Integration Technol., Chinese Acad. of Sci., Beijing ; Ming Liu ; Deyu Tu ; Ge Liu
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This paper reports on the application of a bilayer polymethylmethacrylate (PMMA)/ZrO2 dielectric in copper ph-thalocyanine (CuPc) organic field-effect transistors (OFETs). By depositing a PMMA layer on ZrO2, the leakage of the dielectric is reduced by one order of magnitude compared to single- layer ZrO2. A high-quality interface is obtained between the organic semiconductor and the combined insulators. By integrating the advantages of polymer and high-fe dielectrics, the device achieves both high mobility and low threshold voltage. The typical field-effect mobility, threshold voltage, on/off current ratio, and subthreshold slope of OFETs with bilayer dielectric are 5.6 times 10-2 cm2/V ldr s, 0.8 V, 1.2 times 103, and 2.1 V/dec, respectively. By using the bilayer dielectrics, the hysteresis observed in the devices with single-layer ZrO2 is no longer present.

Published in:

IEEE Transactions on Electron Devices  (Volume:56 ,  Issue: 3 )