Fully integrated 2-GHz LNA with on-chip matching for multi-standard mobile receiver using 0.18 μm CMOS technology

A single-ended wideband low noise amplifier (LNA) for GSM (DCS1800, PCS1900) and WCDMA (Band I to IV) were designed and implemented using 0.18 mum CMOS technology. The circuit topology is based on inductively-degenerated common-source (IDCS) using on-chip inductors at the input circuit for input matching and shunt-peaking components for bandwidth enhancement at load tank. Post layout simulation results shows a power gain of 24-dB, a noise figure of 2.26-dB and an input return loss well below -10-dB at the center frequency of 2-GHz. The LNA draws 6.8-mA from a single 1.8-V power supply.