Referenced Items are not available for this document.
A single-ended wideband low noise amplifier (LNA) for GSM (DCS1800, PCS1900) and WCDMA (Band I to IV) were designed and implemented using 0.18 mum CMOS technology. The circuit topology is based on inductively-degenerated common-source (IDCS) using on-chip inductors at the input circuit for input matching and shunt-peaking components for bandwidth enhancement at load tank. Post layout simulation results shows a power gain of 24-dB, a noise figure of 2.26-dB and an input return loss well below -10-dB at the center frequency of 2-GHz. The LNA draws 6.8-mA from a single 1.8-V power supply.
Published in:
TENCON 2008 - 2008 IEEE Region 10 Conference
Date of Conference: 19-21 Nov. 2008
- Page(s):
- 1 - 5
- E-ISBN :
- 978-1-4244-2409-2
- Print ISBN:
- 978-1-4244-2408-5
- INSPEC Accession Number:
- 10469795
- Conference Location :
- Hyderabad
- Digital Object Identifier :
- 10.1109/TENCON.2008.4766481
- Product Type:
- Conference Publications
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