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Interconnect parasitics in electronic package is responsible for the majority of the degradation of signal quality in high-speed applications. This paper focuses on the characterization of interconnect parasitics in window chip scale package, low-profile fine-pitch ball grid array package, and flip-chip ball grid array package through frequency- and time-domain measurements as well as 3D field simulations. Lumped parasitic capacitance and inductance are characterized for small-size package or small discontinuities in large-size package while time-domain impedance profile is extracted for electrically large interconnect. The measurements correlate well with the simulations, and those characterizations validate high-speed package design.