Design and development of SiGe HBT based high gain amplifier for GPS application

A two stage high gain small signal amplifier for GPS based receiver application is designed and realised using SiGe heterojunction bipolar transistor (HBT). The measured gain and noise figure is 33.5 dB and 2.9 d B respectively at Vce of 2 V, and total current of 10 mA. The circuit is fabricated on microstrip configuration using RT duroid substrate of dielectric constant 10.5 and height 50 mils. This circuit is being used in satellite based GPS receiver.