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Prospects of α-Sic and β-Sic based P+P N N+ IMPATT devices as sub-millimeter wave high-power sources

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1 Author(s)
Mukherjee, M. ; Centre of Millimeterwave Semicond. Devices & Syst., Univ. of Calcutta, Kolkata

Wide-Band-Gap (WBG) alpha (4H and 6H)-SiC and beta(3C)-SiC based double drift region (DDR, p+p n n+ type), IMPATT devices are designed at sub-millimeter wave (Terahertz) region and their high frequency characteristics are compared for the first time through an extensive simulation experiment. The study indicates that at around 0.3 THz, alpha(4H)-SiC based IMPATT device can yield a RF power (PRF) of 20.0 W (efficiency ~ 15.0 %), much better than alpha(6H)-SiC IMPATT which is capable of generating only 7.5 W of RF power (efficiency ~ 12.0 %). On the other hand, beta(3C)-SiC based IMPATT may generate 11.5W output power with an efficiency of 12.5% under similar operating conditions. The comparative analysis reveals the superiority of alpha(4H)-SiC IMPATT oscillator as a high power source at THz regime.

Published in:

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Date of Conference:

21-24 Nov. 2008

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