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A 3.1 to 3.5 GHz monolithic GaAs two-bit phase shifter (90deg & 180deg) have designed and realized. The small signal simulated and measured results have presented. A 3.1 to 3.5 GHz phase shifter has designed using switch-network phase shifter topology. The low pass and high pass filter have the most commonly used networks in switch network phase shifter. By switching between the phase shifting element of low pass and high pass filter, a constant phase shift has produced and this phase shift has relatively flat phase shift versus frequency characteristics. The main advantage of switch network phase shifter is compact in size, minimum phase variation and work over large bandwidth. The two-bit phase shifter has achieved better than 3.8 dB of insertion loss, phase error is better than plusmn1.5 degree with input and output return loss better than 15 dB over the frequency band. The on-wafer measurement has carried out for measurement purpose. This phase shifter has designed using 0.7 mum ion-implanted reacess gate MESFET technology. This phase shifter has used in phase array radar antenna applications. The major advantage of solid-state integrated phase shifter is low power consumption, small size lower switching time, required lower drive power and lightweight. These features of solid-state phase shifter have suitable for phase array radar antenna applications. The chip dimension is 3.6times2.3 mm.