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Polysilicon nanowire chemical sensor based on CMOS standard process

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3 Author(s)
Huang, C.-W. ; Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei ; Hsu, S.-C. ; Lin, C.-T.

Based on the improvements of the lithography technology, the dimension of the device has decreased to nanometer. On the other hand, silicon nanowire has been proposed to detect proteins, DNA, and ions etc. In general, the silicon nanowires are made either by CVD (chemical vapor deposition) or by silicon on insulator (SOI) fabrication process. The former has trouble in electrodes arranging and the latter suffers from more expensive than standard semiconductor process. In this work, we announced CMOS compatible technique which is used to develop polysilicon nanowire field effect transistor as a chemical sensor with low cost and high fidelity to pave the way toward system-on-chip design.

Published in:

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Date of Conference:

8-10 Dec. 2008

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