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Analog/RF performance analysis of coaxial carbon nanotube MOS field effect transistor from non-equilibrium Green’s function simulation

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5 Author(s)
Yuchi Che ; Shenzhen Grad. Sch., Peking Univ., Shenzhen ; Yadong Tao ; Feng Liu ; Xingye Zhou
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Based on the non-equilibrium Greenpsilas function simulation, the analog/RF performance of Coaxial Carbon Nanotube Field Effect Transistor (CNTFET) including the trans-conductance efficiency gm/Id, cutoff frequency ft, and maximum oscillation frequency fmax are analyzed in details. The analysis method is described and the CNTFET analog/RF performance dependence on the operation bias, device chirality, and gate oxide thickness are demonstrated. These results will be useful for the device scientists and circuit engineers to optimize the CNTFET structure and improve its circuit performance for the potential analog/RF application in near future.

Published in:

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Date of Conference:

8-10 Dec. 2008