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High sensitivity pH sensor using AlXGa1-XN/GaN HEMT heterostructure design

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3 Author(s)
Hsin-Shun Huang ; Dept. of Electron. Eng., Chang Gung Univ., Taoyuan ; Chao-Wei Lin ; Chiu, Hsien-Chin

Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al0.3Ga0.7N has the excellent performance among Al0.17Ga0.83N and Al0.25Ga0.75N, and the performance can be achieved about -0.923 mA/mm-pH during pH 4-10, and -2.24 mA/mm-pH during pH 7-8. The result indicates that the better performance of Al0.3Ga0.7N can be applied in high sensitivity pH sensor. Using the characteristic and modifying by different gate oxide, there are many application in the technology of medical for detecting the disease.

Published in:

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Date of Conference:

8-10 Dec. 2008