Referenced Items are not available for this document.
We propose a novel scheme for slow light based on a resonant three-level lambda system (RTLS) in a p-doped semiconductor heterostructure. Numerical simulations show that a slow-down factor of 145 and a slow-down-bandwidth product exceeding 200 THz can be achieved in semiconductor quantum wells at room temperature. These figures of merit make the RTLS slow light especially useful for the enhancement of the optical nonlinearity in high bandwidth all-optical signal processing applications.
Published in:
Lightwave Technology, Journal of
(Volume:26
,
Issue:
23
)
Date of Publication: Dec.1, 2008
- Page(s):
- 3811 - 3817
- ISSN :
- 0733-8724
- INSPEC Accession Number:
- 10444894
- Digital Object Identifier :
- 10.1109/JLT.2008.2005121
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 02 February 2009
- Issue Date :
- Dec.1, 2008
- Sponsored by :
- IEEE Aerospace and Electronic Systems Society
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