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A 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes

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5 Author(s)
Ozpineci, B. ; Power Electron. & Electr. Machinery Res. Center, Oak Ridge Nat. Lab., Oak Ridge, TN ; Chinthavali, M.S. ; Tolbert, L.M. ; Kashyap, A.S.
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Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.

Published in:

Industry Applications, IEEE Transactions on  (Volume:45 ,  Issue: 1 )

Date of Publication:

Jan.-feb. 2009

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