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A Novel High-Speed Multiplexing IC Based on Resonant Tunneling Diodes

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4 Author(s)
Sunkyu Choi ; Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea ; Yongsik Jeong ; Jongwon Lee ; Kyounghoon Yang

A new multiplexing IC based on the resonant tunneling diode (RTD) is proposed. The unique negative differential resistance characteristics arising from quantum effects of the RTD enable us to develop a new functional low-power digital circuit. The proposed multiplexing IC consists of two current-mode-logic monostable-bistable transition logic elements (CML-MOBILEs) based on the RTD and a low-power selector circuit block. The proposed circuit has been fabricated by using an InP RTD/ heterojunction bipolar transistor monolithic microwave integrated circuit technology. The multiplexing operation of the fabricated quantum effect IC has been confirmed up to 45 Gb/s for the first time as a monolithic technology based on the quantum effect devices. The dc power consumption is only 23 mW, which is found to be one-fourth of the current state-of-the-art conventional transistor-based multiplexing IC.

Published in:
Nanotechnology, IEEE Transactions on  (Volume:8 ,  Issue: 4 )

Date of Publication: July 2009

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