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A 35 ns cycle time 3.3 V only 32 Mb NAND flash EEPROM

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12 Author(s)
Y. Iwata ; Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan ; K. Imamiya ; Y. Sugiura ; H. Nakamura
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A 32 Mb NAND type flash EEPROM has been developed with 0.425 μm CMOS technology. A 35 ns cycle time is achieved by adopting a pipeline scheme. A boosted word-line scheme and a program verify operation achieving tight threshold voltage (Vth) distribution of programmed cells reduce read-out access time. Multiple block erase operation is realized by adopting erase block registers. All functions are operable with a single 5.3 V or 5 V power supply

Published in:

IEEE Journal of Solid-State Circuits  (Volume:30 ,  Issue: 11 )