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High-temperature microwave characteristics of GaAs MESFET devices with AlAs buffer layers

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8 Author(s)
Ito, C. ; Northeastern Consortium for Eng. Educ., Port Royal, VA, USA ; Jenkins, T. ; Trombley, G. ; Lee, R.
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AlAs buffers used to reduce the leakage current of high-temperature GaAs MESFET devices are shown to have no detrimental effect on the microwave performance measured to 200/spl deg/C. The f/sub t/ values decrease with increasing temperature, but do not appear to be influenced by the AlAs buffer. The f/sub max/ values also decrease with increasing temperature; however, they are improved with increasing AlAs buffer thickness due to a concomitant decrease in the device output conductance, At 200/spl deg/C ambient temperature, f/sub t/ and f/sub max/ values of 14.5 GHz and 36.7 GHz, respectively, were measured.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 1 )

Date of Publication:

Jan. 1996

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